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Static Storage

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USPTO Class 365 - Static information storage and retrieval
Updated: 2 days 7 hours ago

Semiconductor storage device

Mon, 01/26/2015 - 1:46pm
A semiconductor storage device according to the present embodiment includes a plurality of bit lines, a plurality of word lines, and a plurality of memory cells each including a storage element and a switching element which are connected in series between adjacently paired ones of the bit lines. Gates of...
Categories: Computers

Multiport memory cell having improved density area

Mon, 01/26/2015 - 1:46pm
A mutltiport memory cell having improved density area is disclosed. The memory cell includes a data storing component, a first memory access component coupled to a first side of the data storing component, a second memory access component coupled to a second side of the data storing component, first and...
Categories: Computers

Semiconductor memory

Mon, 01/26/2015 - 1:46pm
A semiconductor memory includes a memory cell array having a plurality of memory cells, a plurality of bit line pairs which are disposed corresponding to respective columns of the memory cell array, and a sense amplifiers which are disposed in plurality corresponding to the plurality of bit line pairs for...
Categories: Computers

Apparatuses and methods for sensing fuse states

Mon, 01/26/2015 - 1:46pm
Apparatuses and methods for sensing fuse states are disclosed herein. An apparatus may include an array having a plurality of sense lines. A plurality of cells may be coupled to a sense line of the plurality of sense lines. A fuse sense circuit may coupled to the sense line of...
Categories: Computers

Resistance variable element methods and apparatuses

Mon, 01/26/2015 - 1:46pm
Apparatus and methods are disclosed, including a method that performs a first operation on a first resistance variable element using a common source voltage, a first data line voltage and a first control gate voltage, and then performs a second operation on a second resistance variable element using the common...
Categories: Computers

Semiconductor memory device

Mon, 01/26/2015 - 1:46pm
To increase a storage capacity of a memory module per unit area, and to provide a memory module with low power consumption, a transistor formed using an oxide semiconductor film, a silicon carbide film, a gallium nitride film, or the like, which is highly purified and has a wide band...
Categories: Computers

Semiconductor device having timing control for read-write memory access operations

Mon, 01/26/2015 - 1:46pm
A semiconductor device avoids the disturb problem and the collision between write and read operations in a DP-SRAM cell or a 2P-SRAM cell. The semiconductor device 1 includes a write word line WLA and a read word line WLB each coupled to memory cells 3. A read operation activates the...
Categories: Computers

Method of writing to a spin torque magnetic random access memory

Mon, 01/26/2015 - 1:46pm
Circuitry and a method provide an increased tunnel barrier endurance (lifetime) previously shortened by dielectric breakdown by providing a pulse of opposite polarity associated with a write pulse. The pulse of opposite polarity may comprise equal or less width and amplitude than that of the write pulse, may be applied...
Categories: Computers

Ring-shaped magnetoresistive memory device and writing method thereof

Mon, 01/26/2015 - 1:46pm
A ring-shaped magnetoresistive memory device includes a ring-shaped magnetoresistive memory cell, a first conductor, and a second conductor. The first conductor is positioned on a first surface of the ring-shaped magnetoresistive memory cell for generating a first magnetic field pulse. The second conductor is positioned on a second surface of...
Categories: Computers

Apparatuses including current compliance circuits and methods

Mon, 01/26/2015 - 1:46pm
Apparatus, devices, systems, and methods are described that include variable state material data storage. Example devices include current compliance circuits that are configured to dynamically adjust a current passing through a variable resistance material during a memory operation. Some configurations utilize components within an array of memory cells to form...
Categories: Computers

Drift mitigation for multi-bits phase change memory

Mon, 01/26/2015 - 1:46pm
An RC-based sensing method and computer program product to effectively sense the cell resistance of a programmed Phase Change Material (PCM) memory cell. The sensing method ensures the same physical configuration of each cell (after programming): same amorphous volume, same trap density/distribution, etc. The sensing method is based on a...
Categories: Computers

Counterbalanced-switch mram

Mon, 01/26/2015 - 1:46pm
A magnetic memory cell is provided. The cell comprises first and second free layers; and an intermediate layer separating the first and second free layers, wherein the first and second free layers are magnetostatically coupled....
Categories: Computers

Direct multi-level cell programming

Mon, 01/26/2015 - 1:46pm
A method is performed in a data storage device that includes a controller coupled to a non-volatile memory. The non-volatile memory includes a group of storage elements. Each storage element is configured to store multiple data bits. Data is sent from the controller to the non-volatile memory and first bits...
Categories: Computers

Operation method of multi-level memory

Mon, 01/26/2015 - 1:46pm
An operation method of a multi-level memory is provided. A first read voltage lower than a standard read voltage is applied to a doped region in a substrate at one side of a control gate of the memory, so as to determine whether a first storage position and a second...
Categories: Computers

Partial reprogramming of solid-state non-volatile memory cells

Mon, 01/26/2015 - 1:46pm
Method and apparatus for managing data in a memory, such as a flash memory array. In accordance with some embodiments, data are written to a set of solid-state non-volatile memory cells so that each memory cell in the set is written to an associated initial programmed state. Drift in the...
Categories: Computers

Dynamic regulation of memory array source line

Mon, 01/26/2015 - 1:46pm
To maintain stability of memory array operations, a current source supplies a common source line of a memory. The magnitude of the regulation current from the source is dynamically determined based on the amount of current from the array itself through use of a feedback control signal provided by a...
Categories: Computers

Memory system and method of controlling memory system

Mon, 01/26/2015 - 1:46pm
According to one embodiment, a low power direction received from a host device is delayed for a first predetermined time and is output as a first signal, and an internal state is caused to transition to a low power consumption mode that corresponds to the low power direction when a...
Categories: Computers

Nonvolatile semiconductor memory device

Mon, 01/26/2015 - 1:46pm
In a writing operation, a control circuit raises the voltage of a writing-prohibited bit line among a plurality of bit lines to a first voltage, and thereafter brings the writing-prohibited bit line into a floating state. Then, the control circuit raises the voltage of a writing bit line other than...
Categories: Computers

Semiconductor device and method of operating the same

Mon, 01/26/2015 - 1:46pm
A semiconductor device includes first memory blocks arranged in a longitudinal direction, and including a plurality of strings, wherein the strings are formed along a vertical direction, and the strings adjacent to each other share bit lines or source lines with each other, each string including a drain selection transistor...
Categories: Computers

Apparatuses and methods for measuring an electrical characteristic of a model signal line and providing measurement information

Mon, 01/26/2015 - 1:46pm
Apparatuses and methods for measuring an electrical characteristic of a model signal line and providing measurement information based at least in part on the measurement of the electrical characteristic. An example apparatus includes a signal line model including a model signal line configured to model electrical characteristics of a signal...
Categories: Computers